Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure

Ting Chang Chang, Po-Tsun Liu, Ya Liang Yang, Jung Chih Hu, Simon M. Sze

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

A novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number2 A
DOIs
StatePublished - 1 Jan 2000

Fingerprint Dive into the research topics of 'Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure'. Together they form a unique fingerprint.

  • Cite this