Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade

Yu Chiang Chao, Hung Kuo Tsai, Hsiao-Wen Zan*, Yung Hsuan Hsu, Hsin-Fei Meng, Sheng Fu Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.

Original languageEnglish
Article number223303
JournalApplied Physics Letters
Volume98
Issue number22
DOIs
StatePublished - 30 May 2011

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