Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess

Yen Ku Lin, Shuichi Noda, Ruey Bor Lee, Chia Ching Huang, Quang Ho Luc, Seiji Samukawa, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation layer, the Al 2 O 3 /AlGaN/GaN enhancement-mode HEMT device shows a threshold voltage of 1.5 V and a current density of 449 mA/mm, and the three-terminal breakdown voltage was 432 V. The device also shows small hysteresis in threshold voltage at stable I-V curve.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages799-801
Number of pages3
ISBN (Electronic)9781509039142
DOIs
StatePublished - 21 Nov 2016
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 22 Aug 201625 Aug 2016

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period22/08/1625/08/16

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    Lin, Y. K., Noda, S., Lee, R. B., Huang, C. C., Luc, Q. H., Samukawa, S., & Chang, E. Y. (2016). Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 799-801). [7751501] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751501