The deposition of ultrathin carbon layers on silicon microtips was implemented by bias-assisted carburization (BAC) using microwave plasma chemical vapor deposition technique. BAC process was performed at low pressure and low deposition temperature. The high emission current, low temperature and large-area growth capability of the BAC silicon microtip emitter were investigated.
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Nov 2000|
|Event||44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA|
Duration: 30 May 2000 → 2 Jun 2000