Enhancement in field emission of silicon microtips by bias-assisted carburization

P. D. Kichambare*, F. G. Tarntair, L. C. Chen, K. H. Chen, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

20 Scopus citations

Abstract

The deposition of ultrathin carbon layers on silicon microtips was implemented by bias-assisted carburization (BAC) using microwave plasma chemical vapor deposition technique. BAC process was performed at low pressure and low deposition temperature. The high emission current, low temperature and large-area growth capability of the BAC silicon microtip emitter were investigated.

Original languageEnglish
Pages (from-to)2722-2729
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number6
DOIs
StatePublished - 1 Nov 2000
Event44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA
Duration: 30 May 20002 Jun 2000

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