Enhanced thermal dissipation and light output of GaN/sapphire light-emitting diode by direct Cu electroplating

Ray-Hua Horng, C. C. Chiang, D. S. Wuu, H. Y. Hsiao, H. I. Lin

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Using the self-alignment lithography and electroplating techniques, a lateral-electrodes GaN light-emitting diode (LED) with a microreflective cup and heat spreader has been demonstrated. The photoresist is used to be the electroplating forms and to produce the microreflective cup and heat spreader. Under 1 A injection, this type of LED presents an output power of 700 mW and a power conversion efficiency is up to two times as compared to that of the LEDs only on sapphire without a current spreader. The performance of LEDs with a microreflective cup and heat spreader is better than the vertical-electrode LEDs on Cu substrate.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number11
DOIs
StatePublished - 22 Sep 2008

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