Enhanced thermal dissipation and light output of GaN/Sapphire light-emitting diodes by direct Cu electroplating

C. C. Chiang, Ray-Hua Horng, D. S. Wuu, H. Y. Hsiao, C. Y. Hsieh, H. I. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Using the self-alignment lithography and copper (Cu) electroplating techniques, a lateral-electrodes GaN light-emitting diode (LED) with a micro reflective cup and heat spreader has been demonstrated. In this work, the photoresist is used to be the electroplating forms and to produce micro reflective cup and 9 mm2 heat spreader. Under 1 A current driving, the LEDs with direct thermal spreader has an output power of 700 mW and a power conversion efficiency is upto 2 times as compared with that of the lateral-electrodes LEDs only on sapphire without current spreader. The performance of LEDs with a micro reflective cup and heat spreader is almost the same (even better) as the vertical-electrodes LEDs on Cu substrate.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 48, SOTAPOCS 48 -and- ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications
Pages13-18
Number of pages6
Edition3
DOIs
StatePublished - 17 Nov 2008
Event48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting - Phoenix, AZ, United States
Duration: 18 May 200822 May 2008

Publication series

NameECS Transactions
Number3
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting
CountryUnited States
CityPhoenix, AZ
Period18/05/0822/05/08

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