This paper investigates the temperature dependence of phonon-scattering- limited mobility μPH for advanced shortchannel strained pMOS devices. By using the split CV method and Matthiessen's rule, surface-roughness-limited mobility μSR and μPH are successfully decoupled. This paper indicates that the temperature sensitivity of μPH is proportional to T-1.75 for a neutral stressor and becomes higher when compressive strain is applied. It is explained by the higher optical phonon energy induced by uniaxially compressive strain. Our new findings may also explain the previously reported higher temperature sensitivity of drain current present in uniaxial strained pMOSFETs.
- Cryogenic temperature
- phononscattering-limited mobility
- strain silicon