Enhanced temperature dependence of phonon-scattering-limited mobility in compressively uniaxial strained pmosfets

William Po Nien Chen*, Jack Jyun Yan Kuo, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

This paper investigates the temperature dependence of phonon-scattering- limited mobility μPH for advanced shortchannel strained pMOS devices. By using the split CV method and Matthiessen's rule, surface-roughness-limited mobility μSR and μPH are successfully decoupled. This paper indicates that the temperature sensitivity of μPH is proportional to T-1.75 for a neutral stressor and becomes higher when compressive strain is applied. It is explained by the higher optical phonon energy induced by uniaxially compressive strain. Our new findings may also explain the previously reported higher temperature sensitivity of drain current present in uniaxial strained pMOSFETs.

Original languageEnglish
Article number6041019
Pages (from-to)4427-4429
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume58
Issue number12
DOIs
StatePublished - 1 Dec 2011

Keywords

  • Cryogenic temperature
  • MOSFET
  • phononscattering-limited mobility
  • strain silicon
  • uniaxial

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