Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant

D. K. Sadana, A. Acovic, G. Shahidi, H. Hanafi, A. C. Warren, D. Grutzmacher, F. Cardone, J. Sun, B. Davari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Scopus citations

Abstract

The experimentally observed VT roll-off and Drain Induced Barrier Lowering (DIBL) at channel lengths of approximately=0.2 μ m in Si-MOSFETs is underestimated by conventional 2D numerical simulations. In this paper it is shown that this is due to B segregation from the channel region towards the As-implanted source/drain regions during the As activation anneal. The resulting B depletion close to the source and drain lowers the local VT and contributes significantly (up to 50% in 0.2 μ m n-channel MOSFETs) to the VT roll-off and DIBL in sub-quarter micron NMOSFETs. This B redistribution originates mainly from ion implantation damage in the source and drain.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages849-852
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - 1992
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 13 Dec 199216 Dec 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period13/12/9216/12/92

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    Sadana, D. K., Acovic, A., Shahidi, G., Hanafi, H., Warren, A. C., Grutzmacher, D., Cardone, F., Sun, J., & Davari, B. (1992). Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 849-852). [307490] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307490