Enhanced recovery speed of nanostructured ZnO photodetectors using nanobelt networks

Cheng Ying Chen*, Ming Wei Chen, Chia Yang Hsu, Der Hsien Lien, Miin Jang Chen, Jr Hau He

*Corresponding author for this work

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

ZnO nanowire (NW) UV photodetectors (PDs) have high sensitivity, while their long recovery time is an important limitation for practical applications. We demonstrated that the recovery time of nanostructured ZnO PDs can be significantly improved using the nanobelt (NB) network. The NB-network PDs are fabricated by only one step without tedious and costly lithography processes. As compared with a recovery time of 32.95s in the single NB-based PD, a fast recovery time of 0.53s observed in the NB-network PDs is achieved due to the existence of the NB-NB junction barriers. As the junction barriers accounting for the poor conductivity of NB networks hinder the electron transport, the dark current of the NB-network PDs is two orders of magnitude lower than that of the single NB-based PDs. The NB networks can be applicable to the building structures for nanostructured ZnO-based light-sensing applications with wafer-scale uniformity without compromising the unique photodetection properties exclusively provided by high surface-to-volume ratio and reduced dimensionality of an individual NW/NB.

Original languageEnglish
Article number6202317
Pages (from-to)1807-1811
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume18
Issue number6
DOIs
StatePublished - 2012

Keywords

  • Nanobelt (NB)
  • nanowire (NW)
  • network
  • photodetector (PD)
  • photoresponse
  • Schottky junction
  • sensor
  • ZnO

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