The quality (Q) factor and self-resonant frequency (SRF) of the spiral inductor in CMOS IC technologies are limited by both high substrate capacitance and substrate loss. In this letter, a post-fabrication maskless etching procedure is used to selectively remove the silicon substrate and suspend inductors in air. Using this technique, a lot of inductors suitable for 2.4GHz ISM band are investigated. The Q factor increased from 3.9 to 6.5 at 2.4GHz for a small inductor 2.14-nH and 2.55 to 5.88 for a large inductor 9-nH at 1.5GHz. Also the SRF of the 9-nH inductor is raised from 3.5GHz to 6.1GHz.
|Number of pages||1|
|State||Published - 1 Dec 2000|
|Event||12 Asia-Pacific Microwave Conference - Sydney, Australia|
Duration: 3 Dec 2000 → 6 Dec 2000
|Conference||12 Asia-Pacific Microwave Conference|
|Period||3/12/00 → 6/12/00|