Enhanced Q spiral inductors with MEMS technology for RF applications

Chia Ying Lee*, Yao Huang Kao, Jiunn Jye Luo, Kow-Ming Chang

*Corresponding author for this work

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

The quality (Q) factor and self-resonant frequency (SRF) of the spiral inductor in CMOS IC technologies are limited by both high substrate capacitance and substrate loss. In this letter, a post-fabrication maskless etching procedure is used to selectively remove the silicon substrate and suspend inductors in air. Using this technique, a lot of inductors suitable for 2.4GHz ISM band are investigated. The Q factor increased from 3.9 to 6.5 at 2.4GHz for a small inductor 2.14-nH and 2.55 to 5.88 for a large inductor 9-nH at 1.5GHz. Also the SRF of the 9-nH inductor is raised from 3.5GHz to 6.1GHz.

Original languageEnglish
Number of pages1
DOIs
StatePublished - 1 Dec 2000
Event12 Asia-Pacific Microwave Conference - Sydney, Australia
Duration: 3 Dec 20006 Dec 2000

Conference

Conference12 Asia-Pacific Microwave Conference
CitySydney, Australia
Period3/12/006/12/00

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    Lee, C. Y., Kao, Y. H., Luo, J. J., & Chang, K-M. (2000). Enhanced Q spiral inductors with MEMS technology for RF applications. Paper presented at 12 Asia-Pacific Microwave Conference, Sydney, Australia, . https://doi.org/10.1109/APMC.2000.926079