Enhanced Properties in Conductive-Bridge Resistive Switching Memory with Oxide-Nitride Bilayer Structure

Tsung Ling Tsai, Fa Shen Jiang, Chia Hua Ho, Chen Hsi Lin, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

In this letter, we propose a new method to improve resistive switching properties in ZrO2-based conductive-bridge resistive memory devices by introducing a thin AlN layer with high thermal conductivity between the ZrO2 layer and TiN bottom electrode. Compared with the Cu/TiW/ZrO2/TiN single-layer device, the Cu/TiW/ZrO2/AlN/TiN bilayer device exhibits lower operation voltages, higher endurance performance, and higher resistive switching uniformity. These substantial improvements in the resistive switching properties are attributed to the formation and rupture of conductive filament that can be effectively controlled in the device after inserting the AlN layer.

Original languageEnglish
Article number7552563
Pages (from-to)1284-1287
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number10
DOIs
StatePublished - 1 Oct 2016

Keywords

  • AlN
  • conductive filament (CF)
  • conductive-bridge random access memory (CBRAM)
  • Thermal conductivity

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