Enhanced power conversion efficiency in InGaNbased solar cells via graded composition multiple quantum wells

Yu Lin Tsai, Sheng Wen Wang, Jhih Kai Huang, Lung Hsing Hsu, Ching Hsueh Chiu, Po-Tsung Lee, Pei-Chen Yu, Chien-Chung Lin, Hao-Chung Kuo

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

This work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition in quantum wells (GQWs) toward p-GaN as absorber. The GQW can improve the fill factor from 42% to 62% and enhance the short current density from 0.8 mA/cm2 to 0.92 mA/cm2, as compares to the typical MQW solar cells. As a result, the PCE is boosted from 0.63% to 1.11% under AM1.5G illumination. Based on simulation and experimental results, the enhanced PCE can be attributed to the improved carrier collection in GQW caused by the reduction of potential barriers and piezoelectric polarization induced fields near the p-GaN layer. The presented concept paves a way toward highly efficient InGaN-based solar cells and other GaN-related MQW devices.

Original languageEnglish
Pages (from-to)A1434-A1441
JournalOptics Express
Volume23
Issue number24
DOIs
StatePublished - 30 Nov 2015

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