Enhanced photocurrent of a nitride-based photodetector with InN dot-like structures

Lung Hsing Hsu, Chien-Chung Lin*, Hau Vei Han, Da Wei Lin, Yen Hua Lo, Yi Chia Hwang, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

The InN dot-like layer was applied in the gallium nitride based material for the purpose of infrared photodetectors (PDs). This InN layer was grown by a low-pressure metal organic chemical vapor deposition technology under different growth temperatures. The X-ray diffraction patterns provide the information of crystal structure and the hexagonal orientation was detected. The Raman shifts and photoluminescence were also used to characterize the quality of InN film. Finally, the fabricated Schottky-type photodetector was tested under a solar simulator and a longwavelength laser (λ = 1550nm). The measurements show a highly linear relation between photo-generated currents and laser powers for the wavelength of 1550 nm. In the photonic detection range suitable for optical fiber communiation, a quantum efficiency of 9.2% can be observed.

Original languageEnglish
Pages (from-to)2565-2573
Number of pages9
JournalOptical Materials Express
Volume4
Issue number12
DOIs
StatePublished - 1 Jan 2014

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