Enhanced phase relaxation in a hybrid ferromagnet/semiconductor system

Kuang Yao Chen; Chun Kai Yang; C. T. Liang; N. Aoki; Y. Ochiai; Y. Ujiie; K. A. Cheng; Li Hung Lin; C. F. Huang; Yu Ru Li; Yen Shung Tseng; Po Tsun Lin; Jau Yang Wu; Sheng-Di Lin

doi:10.3938/jkps.55.173

Enhanced phase relaxation in a hybrid ferromagnet/semiconductor system

Kuang Yao Chen, Chun Kai Yang, C. T. Liang, N. Aoki, Y. Ochiai, Y. Ujiie, K. A. Cheng, Li Hung Lin, C. F. Huang, Yu Ru Li, Yen Shung Tseng, Po Tsun Lin, Jau Yang Wu, Sheng-Di Lin

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems.

Original language	English
Pages (from-to)	173-176
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	1
DOIs	https://doi.org/10.3938/jkps.55.173
State	Published - 1 Jul 2009

Keywords

Hybrid ferromagnet/semiconductor system
Phase-relaxation rate
Two-dimensional electron system

Access to Document

10.3938/jkps.55.173

Fingerprint Dive into the research topics of 'Enhanced phase relaxation in a hybrid ferromagnet/semiconductor system'. Together they form a unique fingerprint.

Cite this

@article{2e02621d32894582bacd7ff0bf93c926,

title = "Enhanced phase relaxation in a hybrid ferromagnet/semiconductor system",

abstract = "Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems.",

keywords = "Hybrid ferromagnet/semiconductor system, Phase-relaxation rate, Two-dimensional electron system",

author = "Chen, {Kuang Yao} and Yang, {Chun Kai} and Liang, {C. T.} and N. Aoki and Y. Ochiai and Y. Ujiie and Cheng, {K. A.} and Lin, {Li Hung} and Huang, {C. F.} and Li, {Yu Ru} and Tseng, {Yen Shung} and Lin, {Po Tsun} and Wu, {Jau Yang} and Sheng-Di Lin",

year = "2009",

month = jul,

day = "1",

doi = "10.3938/jkps.55.173",

language = "English",

volume = "55",

pages = "173--176",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}

Enhanced phase relaxation in a hybrid ferromagnet/semiconductor system. / Chen, Kuang Yao; Yang, Chun Kai; Liang, C. T.; Aoki, N.; Ochiai, Y.; Ujiie, Y.; Cheng, K. A.; Lin, Li Hung; Huang, C. F.; Li, Yu Ru; Tseng, Yen Shung; Lin, Po Tsun; Wu, Jau Yang; Lin, Sheng-Di.

In: Journal of the Korean Physical Society, Vol. 55, No. 1, 01.07.2009, p. 173-176.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Enhanced phase relaxation in a hybrid ferromagnet/semiconductor system

AU - Chen, Kuang Yao

AU - Yang, Chun Kai

AU - Liang, C. T.

AU - Aoki, N.

AU - Ochiai, Y.

AU - Ujiie, Y.

AU - Cheng, K. A.

AU - Lin, Li Hung

AU - Huang, C. F.

AU - Li, Yu Ru

AU - Tseng, Yen Shung

AU - Lin, Po Tsun

AU - Wu, Jau Yang

AU - Lin, Sheng-Di

PY - 2009/7/1

Y1 - 2009/7/1

N2 - Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems.

AB - Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems.

KW - Hybrid ferromagnet/semiconductor system

KW - Phase-relaxation rate

KW - Two-dimensional electron system

UR - http://www.scopus.com/inward/record.url?scp=69249187745&partnerID=8YFLogxK

U2 - 10.3938/jkps.55.173

DO - 10.3938/jkps.55.173

M3 - Article

AN - SCOPUS:69249187745

VL - 55

SP - 173

EP - 176

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 1

ER -

Enhanced phase relaxation in a hybrid ferromagnet/semiconductor system

Abstract

Keywords

Access to Document

Other files and links

Cite this