Enhanced phase relaxation in a hybrid ferromagnet/semiconductor system

Kuang Yao Chen, Chun Kai Yang, C. T. Liang, N. Aoki, Y. Ochiai, Y. Ujiie, K. A. Cheng, Li Hung Lin, C. F. Huang, Yu Ru Li, Yen Shung Tseng, Po Tsun Lin, Jau Yang Wu, Sheng-Di Lin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems.

Original languageEnglish
Pages (from-to)173-176
Number of pages4
JournalJournal of the Korean Physical Society
Issue number1
StatePublished - 1 Jul 2009


  • Hybrid ferromagnet/semiconductor system
  • Phase-relaxation rate
  • Two-dimensional electron system

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