Fluorine (F)-implanted polycrystalline silicon thin-film transistor (poly-Si TFT) are proposed for the enhancement of device performance. A significant improvement in electrical characteristics, such as I ON/IOFF ratio, and field effect mobility, can be realized in the new thin-film transistor. The field effect mobility for F-implanted poly-Si TFTs is 53.82 cm2/V-s, and higher than 19.74 cm 2/V-s in conventional SPC poly-Si TFTs. Furthermore, the F-implanted poly-Si TFT exhibits high immunity against hot carrier effect and improved electrical reliability. The manufacturing processes are simple and without additional thermal annealing steps, thereby compatible with the conventional TFT fabrication processes.