Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

Wei Chih Peng, Yew-Chuhg Wu*

*Corresponding author for this work

Research output: Contribution to journalArticle

57 Scopus citations

Abstract

An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs.

Original languageEnglish
Article number181117
JournalApplied Physics Letters
Volume88
Issue number18
DOIs
StatePublished - 1 May 2006

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