Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium

Yee Chia Yeo, Qiang Lu, Tsu Jae King, Chen-Ming Hu, Takayulu Kawashima, Masato Oishi, Supika Mashiro, Junro Sakai

Research output: Contribution to journalArticlepeer-review

70 Scopus citations


We report the demonstration of a novel sub-100 nm CMOS technology with strained-Si0.76Ge0.24/Si heterostructure channels formed by ultra-high-vacuum chemical-vapor-deposition (UHV-CVD). The incorporation of 24% Ge in the channel provides a 25% enhancement in PMOSFET drive current for channel lengths down to 0.1 μm. Enhancement in NMOSFET drive current is concomitantly observed for channel lengths below 0.4 μm.

Original languageEnglish
Pages (from-to)753-756
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Jan 2000

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