We report the demonstration of a novel sub-100 nm CMOS technology with strained-Si0.76Ge0.24/Si heterostructure channels formed by ultra-high-vacuum chemical-vapor-deposition (UHV-CVD). The incorporation of 24% Ge in the channel provides a 25% enhancement in PMOSFET drive current for channel lengths down to 0.1 μm. Enhancement in NMOSFET drive current is concomitantly observed for channel lengths below 0.4 μm.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Jan 2000|