Enhanced oxidation of sic substrates using La2O3 capped annealing and a proposal for uniform LaSiON gate dielectric formation

Y. M. Lei, S. Munekiyo, T. Kawanago, K. Kakushima, K. Kataoka, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, M. Furuhashi, N. Miura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper, Enhanced oxidation of SiC(0001) substrates using La2O3 capped annealing has been presented. Compared to thermal oxidation, lower oxidation temperature can be implemented to form SiO2 layer, owing to higher oxidation rate by 10 times with La2O3 capped oxidation by catalytic effect of the film. Although oxidation kinetics are based on oxidation through step faces, the roughness of created SiO2 has shown improved surface and interface over conventional dry oxidation, owing to oxygen radical oxidation induced by La2O3• Here, we propose a novel LaSiON dielectric formation based on the reaction of SiN and La2O3 layers. Owing to amorphous nature of the initial SiNx film, a uniform LaSiON film both thickness and composition parallel to the surface can be achieved. As oxidation of SiC substrates is inhibited, face dependent oxidation to cause thickness distribution can be eliminated.

Original languageEnglish
Title of host publication2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages110-113
Number of pages4
ISBN (Electronic)9781479954933
DOIs
StatePublished - 20 Nov 2014
Event2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 - Knoxville, United States
Duration: 13 Oct 201415 Oct 2014

Publication series

Name2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Conference

Conference2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
CountryUnited States
CityKnoxville
Period13/10/1415/10/14

Keywords

  • La-silicate
  • Oxidation
  • SiC

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    Lei, Y. M., Munekiyo, S., Kawanago, T., Kakushima, K., Kataoka, K., Wakabayashi, H., Tsutsui, K., Natori, K., Iwai, H., Furuhashi, M., & Miura, N. (2014). Enhanced oxidation of sic substrates using La2O3 capped annealing and a proposal for uniform LaSiON gate dielectric formation. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 (pp. 110-113). [6964635] (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2014.6964635