Enhanced output power of GaN-based resonance cavity light-emitting diodes with optimized ITO design

Tzeng Tsong Wu*, Chien-Chung Lin, Yun Lin Wu, Chien Kang Chen, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We fabricated and measured GaN-based resonant cavity light-emitting diodes with a 30 nm thick Indium tin oxide (ITO) thin film as a transparent contact layer. Four different ITO structures on p-type GaN samples were deposited by sputter and e-gun, and the corresponding device performance was compared. Each of these four samples has been annealed by its optimal parameters. The ITO thin film deposited by sputter demonstrated better electrical characteristics, surface morphology, specific contact resistance, and the overall device light output compared to those of the e-gun samples. Between the two sputtered ITO types, the hybrid type shows higher roll-over current density of 14 kA/cm 2, and the output power is increased from 15 to 39μW. From statistical data of the 2-D light intensity under the same current, we saw the lateral current spreading of the pure crystalline ITO by sputter is worst. The hybrid type, which combines the crystalline and amorphous ITO, has the best overall performance when we consider all the electrical, optical, and metrology measurements. From these results, we believe the 30 nm thick hybrid ITO thin film has the best potential to be applied in light emitting devices such as light-emitting diodes, laser diodes, etc.

Original languageEnglish
Article number6053983
Pages (from-to)3757-3763
Number of pages7
JournalJournal of Lightwave Technology
Volume29
Issue number24
DOIs
StatePublished - 15 Dec 2011

Keywords

  • Current spreading
  • GaN
  • Indium tin oxide (ITO)
  • Resonance cavity light-emitting diodes (RCLEDs)

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