Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design

Qian Chen, Jiangnan Dai*, Xiaohang Li, Yang Gao, Hanling Long, Zi Hui Zhang, Changqing Chen, Hao Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Low external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.

Original languageEnglish
Article number8879560
Pages (from-to)1925-1928
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number12
DOIs
StatePublished - Dec 2019

Keywords

  • current spreading
  • DUV LEDs
  • PN electrode location

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