Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide

Tsu Hsiu Perng*, Chao-Hsin Chien, Ching Wei Chen, Horng-Chih Lin, Chun Yen Chang, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The degradation induced by substrate hot electron (SHE) injection in 0.13-μm nMOSFETs with ultrathin (∼2.0 - nm) plasma nitrided gate dielectric was studied. Compared to the conventional thermal oxide, the ultrathin nitrided gate dielectric is found to be more vulnerable to SHE stress, resulting in enhanced threshold voltage (V t ) shift and transconductance (G m ) reduction. The severity of the enhanced degradation increases with increasing nitrogen content in gate dielectric with prolonged nitridation time. While the SHE-induced degradation is found to be strongly related to the injected electron energy for both conventional oxide [1], [2] and plasma-nitrided oxide, dramatic degradation in threshold voltage shift for nitrided oxide is found to occur at a lower substrate bias magnitude (∼ -1 V), compared to thermal oxide (∼ -1.5 V). This enhanced degradation by negative substrate bias in nMOSFETs with plasma-nitrided gate dielectric is attributed to a higher concentration of paramagnetic electron trap precursors introduced during plasma nitridation [3].

Original languageEnglish
Pages (from-to)333-335
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number5
DOIs
StatePublished - 1 May 2003

Keywords

  • Paramagnetic electron trap
  • Plasma nitrided gate dielectric
  • Substrate hot electron

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