Enhanced metalorganic chemical vapor deposition titanium nitride film fabricated using tetrakis-dimethylamino-titanium for barrier metal application in sub-half-micron technology

Chin Kun Wang*, Lu Min Liu, Marvin Liao, Huang-Chung Cheng, Mou Shiung Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Enhanced metalorganic chemical vapor deposition (MOCVD) titanium nitride (TiN:C) film with low resistivity (< 700 μΩ · cm) has been fabricated by thermal decomposition of tetrakis-dimethylamino-titanium (TDMAT; Ti[N(CH3]2]4). Enhancement is carried out by in-situ N2 plasma treatment of as-deposited TiN:C film and the enhanced TiN:C film has good stability: less than 4% increase in film resistivity after exposure to air for 24 days. The amount of oxygen absorbed in this enhanced TiN:C film after air exposure, determined by Auger electron spectroscopy (AES) was significantly reduced. This enhanced MOCVD TiN:C film has been successfully applied to sub-half-micron devices. A void-tree tungsten plug (W plug) for sub-half-micron holes can be achieved. Good barrier performance and low contact/via resistance have also been demonstrated.

Original languageEnglish
Pages (from-to)4274-4279
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number8
DOIs
StatePublished - 1 Aug 1996

Keywords

  • MOCVD
  • N plasma
  • TDMAT
  • TiN:C
  • W plug

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