Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography

H. W. Huang, C. H. Lin, K. Y. Lee, C. C. Yu, J. K. Huang, B. D. Lee, Hao-Chung Kuo, K. M. Leung, S. C. Wang

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31 Scopus citations

Abstract

GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 νm × 350 νm, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction.

Original languageEnglish
Article number085008
JournalSemiconductor Science and Technology
Volume24
Issue number8
DOIs
StatePublished - 24 Aug 2009

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