Enhanced light output power and growth mechanism of gan-based light-emitting diodes grown on cone-shaped SiO2 patterned template

Da Wei Lin*, Jhih Kai Huang, Chia Yu Lee, Ruey Wen Chang, Yu-Pin Lan, Chien-Chung Lin, Kang Yuan Lee, Chung Hsiang Lin, Po-Tsung Lee, Gou Chung Chi, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this study, we successfully transferred the patterns of a cone-shaped patterned sapphire substrate (CPSS) into SiO2 layer to fabricate a cone-shaped SiO2 patterned template by using nanoimprint lithography (NIL). The GaN-based light-emitting diodes (LEDs) were grown on this template by metal-organic chemical vapor deposition (MOCVD). The transmission electron microscopy (TEM) images suggest that the stacking faults formed near the cone-shaped SiO2 patterns during the epitaxial lateral overgrowth (ELOG) can effectively suppress the threading dislocations, which results in an enhancement of internal quantum efficiency. The Monte Carlo ray-tracing simulation reveals that the light extraction efficiency of the LED grown on cone-shaped SiO2 patterned template can be enhanced as compared with the LED grown on CPSS. As a result, the light output power of the LED grown on cone-shaped SiO2 patterned template outperformed the LED grown on CPSS.

Original languageEnglish
Article number6374704
Pages (from-to)285-291
Number of pages7
JournalIEEE/OSA Journal of Display Technology
Volume9
Issue number4
DOIs
StatePublished - 1 Jan 2013

Keywords

  • Epitaxial lateral overgrowth (ELOG)
  • internal quantum efficiency (IQE)
  • light extraction efficiency (LEE)
  • light-emitting diodes (LEDs)
  • nano-imprint lithography (NIL)

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