Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Hung Wen Huang, J. T. Chu, C. C. Kao, T. H. Hseuh, Tien-chang Lu, Hao-Chung Kuo, S. C. Wang*, C. C. Yu

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

95 Scopus citations

Abstract

This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

Original languageEnglish
Pages (from-to)1844-1848
Number of pages5
JournalNanotechnology
Volume16
Issue number9
DOIs
StatePublished - 1 Sep 2005

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