Enhanced light output in roughened GaN-based light-emitting diodes using electrodeless photoelectrochemical etching

Shun Cheng Hsu*, Chong Yi Lee, Jung Min Hwang, Juh Yuh Su, Dong Sing Wuu, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0° which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED.

Original languageEnglish
Pages (from-to)2472-2474
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number23
DOIs
StatePublished - 1 Dec 2006

Keywords

  • Gallium nitride (GaN)
  • Light extraction
  • Light-emitting diode (LED)
  • Photoelectrochemical (PEC)

Fingerprint Dive into the research topics of 'Enhanced light output in roughened GaN-based light-emitting diodes using electrodeless photoelectrochemical etching'. Together they form a unique fingerprint.

  • Cite this