The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|State||Published - 25 Apr 2006|
- Excimer laser
- Gallium nitride (GaN)
- Light-emitting diode (LED)