Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

Hung Wen Huang, Jung Tang Chu, Chih Chiang Kao, Tao Hung Hsueh, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang*, Chang Chin Yu, Shou Yi Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.

Original languageEnglish
Pages (from-to)3442-3445
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
StatePublished - 25 Apr 2006

Keywords

  • Excimer laser
  • Gallium nitride (GaN)
  • Light-emitting diode (LED)

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