Enhanced light output in InGaN-based light-emitting diodes with omnidirectional one-dimensional photonic crystals

Chung Hsiang Lin*, Jui Yen Tsai, Chih Chiang Kao, Hao-Chung Kuo, C. C. Yu, J. R. LoJun-Ren, Kok Ming Leung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We have successfully designed and fabricated GaN-based light-emitting diodes (LEDs) containing an omnidirectional one-dimensional photonic crystal (1D PC). The ID PC is composed of alternatively stacked TiO2 and SiO2 layers designed to possess a photonic band gap (PBG) within the blue regime of interest. With the same multiple quantum well (MQW) emission peak at approximately 450 nm and a driving current of 20 mA, the light output powers of the LED with and without the 1D PC are approximately 11.7 and 6.5 mW, respectively. The enhancement in light extraction of our LED with ID PC demonstrates that a properly designed omnidirectional ID PC can have a higher reflectance and a wider reflection angle than a conventional distributed Bragg reflector (DBR). Our work shows promising potential for the enhancement of output powers of commercial light emitting devices.

Original languageEnglish
Pages (from-to)1591-1593
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number3 A
DOIs
StatePublished - 8 Mar 2006

Keywords

  • GaN
  • Light-emitting diode
  • Omnidirectional reflector
  • Photonic crystal

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