Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern

B. S. Cheng, C. H. Chiu, K. J. Huang, C. F. Lai, Hao-Chung Kuo, C. H. Lin, Tien-chang Lu, S. C. Wang, C. C. Yu

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

In this paper, we propose a simple, low cost and mass producible nanoimprint lithography (NIL) method to texture the surface of GaN-based light emitting diodes (LEDs) with a two-dimensional photonic crystal (2DPC). Such a 2DPC structure not only enhanced the light output power but also changed the far-field pattern simultaneously. Also, a TiO2/SiO2 omnidirectional reflector (ODR) was deposited on the backside of the LEDs to further increase the light output power. Under 350 mA current injection, it was found that forward voltages were 3.35, 3.34 and 3.75 V while the light output powers of the LEDs were 59.5, 92.5 and 112.1 mW for the conventional LED, the PCLED with 20 nm depth, and the PCLED with 120 nm depth all with chip size of 1 mm × 1 mm, respectively. A 88.4% enhancement in light output power of PCLED with a 120 nm depth and ODR on the backside could be achieved when compared to the conventional LED under the driving current of 350 mA. From the measurement results, it was also found that the NIL process does not degrade the electrical properties of the fabricated LEDs.

Original languageEnglish
Article number055002
Pages (from-to)1-5
Number of pages5
JournalSemiconductor Science and Technology
Volume23
Issue number5
DOIs
StatePublished - 1 May 2008

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