Enhanced light extraction efficiency in ingan lightemitting diodes through photoelectrochemical sidewall shaping process

Chia Feng Lin*, Chung Chieh Yang, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The cone-shaped-sidewall InGaN-based light-emitting diodes (LEDs) with higher light extraction efficiency were fabricated through the photoelectrochemical (PEC) process. The process procedures were consisted with the PEC selective wet oxidation on n-type GaN without p-type GaN layer, removing Ga2O3 layer, crystallographic wet etching process, and forming cone-shaped sidewall structure. The stable crystallographic etching planes were formed as the p-type GaN {1011̄} planes and n-type GaN {1010̄} planes with a 27° included angle. The InGaN/GaN multi-quantum-well (MQW) layers were located at the come's tip nano-structure in mesa-edge region, and the micro-photoltminescence spectrums had the blue shift phenomenon from 457.8nm to 450.8nm caused by the quantum confinement effect and particle compress strain released.

Original languageEnglish
Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
Pages111-115
Number of pages5
Edition5
DOIs
StatePublished - 1 Dec 2007
Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: 7 Oct 200712 Oct 2007

Publication series

NameECS Transactions
Number5
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period7/10/0712/10/07

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    Lin, C. F., Yang, C. C., Kuo, H-C., & Wang, S. C. (2007). Enhanced light extraction efficiency in ingan lightemitting diodes through photoelectrochemical sidewall shaping process. In ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices (5 ed., pp. 111-115). (ECS Transactions; Vol. 11, No. 5). https://doi.org/10.1149/1.2783864