Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate

Stone Cheng*, Po Chien Chou, Wei-Hua Chieng, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 °C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 × 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W.

Original languageEnglish
Pages (from-to)20-24
Number of pages5
JournalApplied Thermal Engineering
Issue number1-2
StatePublished - 1 Jan 2013


  • GaN HEMTs
  • Infrared (IR) thermography
  • Power electronics
  • Thermal management

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