Enhanced ion implantation charging damage on thin gate oxide due to photoresist

Donggun Park*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

Charging damage during the high current ion implantation process is studied for the capacitors with 10 nm gate oxide in terms of photoresist pattern effect. Enhanced charging damage due to photoresist is studied quantitatively using antenna structures and a special photoresist pattern. Interface traps generated by the charging current injection are measured using the CV method, which is sensitive and simple to monitor the charging damage quantitatively. The oxide breakdown can be predicted from the charging voltage so determined. In-situ doped polysilicon was used for the gate electrode.

Original languageEnglish
Pages93-95
Number of pages3
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA
Duration: 16 Jun 199621 Jun 1996

Conference

ConferenceProceedings of the 1996 11th International Conference on Ion Implantation Technology
CityAustin, TX, USA
Period16/06/9621/06/96

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