Charging damage during the high current ion implantation process is studied for the capacitors with 10 nm gate oxide in terms of photoresist pattern effect. Enhanced charging damage due to photoresist is studied quantitatively using antenna structures and a special photoresist pattern. Interface traps generated by the charging current injection are measured using the CV method, which is sensitive and simple to monitor the charging damage quantitatively. The oxide breakdown can be predicted from the charging voltage so determined. In-situ doped polysilicon was used for the gate electrode.
|Number of pages||3|
|State||Published - 1 Dec 1996|
|Event||Proceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA|
Duration: 16 Jun 1996 → 21 Jun 1996
|Conference||Proceedings of the 1996 11th International Conference on Ion Implantation Technology|
|City||Austin, TX, USA|
|Period||16/06/96 → 21/06/96|