Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's

Jone F. Chen*, Kazunari Ishimaru, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Enhanced hot-carrier induced current degradation in narrow channel PMOSFET's with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may be responsible for the enhanced electron trapping efficiency.

Original languageEnglish
Pages (from-to)332-334
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number9
DOIs
StatePublished - 1 Sep 1998

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