Enhanced hole mobility and reliability of panel epi-like silicon transistors using backside green laser activation

Yu Ting Lin*, Jia Min Shieh, Chih Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The hole mobility and reliability of green continuous-wave laser-crystallized epi-like Si transistors on glass panel substrates were enhanced by source/drain activation by backside green laser irradiation. Green laser energy was scanned uniformly across junctions since the gate structures included no interference, in an attempt to conduct super visible-laser lateral activation. The enhancement was thus explained by the formation of continuous improved epi-like Si microstructures with reduced grain defects and with a barely increased number of interface defects over the entire channel/junction. The hole mobility in such laser-activated devices was as high as 403 cm2/V · s, which doubles that of thermally activated devices.

Original languageEnglish
Pages (from-to)790-792
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number9
DOIs
StatePublished - 1 Dec 2007

Keywords

  • Backside green laser activation
  • Continuous-wave (CW) laser crystallization (CLC)
  • Epi-like Si transistors

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