Enhanced growth of low-resistivity titanium silicides on epitaxial Si 0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

Wen-Wei Wu, C. W. Wang, Kuan-Neng Chen, S. L. Cheng, S. W. Lee

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

Original languageEnglish
Pages (from-to)7279-7282
Number of pages4
JournalThin Solid Films
Volume518
Issue number24
DOIs
StatePublished - 1 Oct 2010

Keywords

  • Epitaxial growth
  • Low-resistivity silicide
  • Nano thin film
  • Si-Ge alloys
  • TiSi

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