Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 with a sacrificial amorphous Si interlayer

Wen-Wei Wu, T. F. Chiang, S. L. Cheng, S. W. Lee, L. J. Chen, Y. H. Peng, H. H. Cheng

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Abstract

Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi2 on Si0.7Ge 0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

Original languageEnglish
Pages (from-to)820-822
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number5
DOIs
StatePublished - 29 Jul 2002

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    Wu, W-W., Chiang, T. F., Cheng, S. L., Lee, S. W., Chen, L. J., Peng, Y. H., & Cheng, H. H. (2002). Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 with a sacrificial amorphous Si interlayer. Applied Physics Letters, 81(5), 820-822. https://doi.org/10.1063/1.1494103