Enhanced green laser activation by antireflective gate structures in panel transistors

Jia Min Shieh*, Chih Chen, Yu Ting Lin, Ci Ling Pan

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Antireflective gate structures of polycrystalline silicon (poly-Si) and silicon dioxide films enable postimplantation green continuous-wave laser annealing of all Si regions of green laser-crystallized panel Si transistors. About 40% of the incident laser-energy penetrates to the channels, owing to antireflective gate structures with the absorptive gate poly-Si, while 65% of the incident laser-energy enters the source/drain regions because of Fresnel reflections at the air/source (drain) interfaces. Such inverted laser-energy profiles and ascendant defect distributions along the channels/junctions/contact regions, yielded continuous, improved epilike Si microstructures over the entire active layer. The electron mobility of the transistors, 620 cm2 V s, approaches that of integrated-circuits transistors.

Original languageEnglish
Article number063503
JournalApplied Physics Letters
Volume92
Issue number6
DOIs
StatePublished - 22 Feb 2008

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