Enhanced ferroelectric properties of Pb(Zr0.53Ti 0.47)O3 thin films on SrRuO3/Ru/SiO 2/Si substrates

Y. K. Wang, Tseung-Yuen Tseng, Pang Lin

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Abstract

Highly (110)-oriented Pb(Zr0.53Ti0.47)O3 (PZT) films were deposited on SrRuO3 (SRO)/Ru/SiO2/Si substrates using a sol-gel method, in which SrRuO3 films were deposited at various substrate temperatures. The crystallinity of the PZT films was improved after the annealing process. The leakage current, dielectric constant, and polarization versus electric-field characteristics of PZT films were strongly dependent on the annealing and deposition temperatures of the SRO films. The 650°C annealed PZT film grown on SRO has a leakage current of 9×10-7A/cm2 at an applied field of 500 kV/cm, dielectric constant of 1306, remanent polarization (Pr) of 40.1μC/cm2 and coercive field (Ec) of 78.5 kV/cm at an applied voltage of 5 V. The PZT films indicated fatigue-free characteristics up to ∼1.0×1012 switching cycles under 5 V bipolar pulse.

Original languageEnglish
Pages (from-to)3790-3792
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number20
DOIs
StatePublished - 20 May 2002

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