Enhanced extreme ultraviolet lithography mask inspection contrast using fabry-perot type antireflective coating

Hsu Chun Cheng*, Hsuen Li Chen, Tsung Shine Ko, Lee Jene Lai, Fu-Hsiang Ko, Tieh Chi Chu

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this paper, we describe two strategies for solving the low-contrast problem during extreme ultraviolet lithography (EUVL) mask inspection processes. One is the use of single-layer antireflective coating (ARC), and the other is the use of Fabry-Perot-type ARC. The materials of ARC are the same as those of buffer layers, such as SiO2 and Si3N4 which are easy to fabricate. Contrast can be increased up to >95% by adding ARC. For both absorbers, Single-layer Si3N4 ARC and Si 3N4-based Fabry-Perot-type ARC show better performances than SiO2 ARC. Both types of ARC maintain a high contrast at 40% with a large thickness variation even until ±40%. Moreover, the top absorber in Fabry-Perot-type ARC has good conductivity that can eliminate electrical distortion, which is caused by electron charging during e-beam direct writing. The Fabry-Perot-type ARC structure has better contrast and thickness variation tolerance than the single-layer ARC structure. The film materials in Fabry-Perot structure can also be used for various absorber and dielectric materials.

Original languageEnglish
Pages (from-to)3703-3706
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number6 B
DOIs
StatePublished - 1 Jun 2004

Keywords

  • Absorber
  • Antireflective coatings
  • Buffer layer
  • Extreme ultraviolet lithography
  • Fabry-perot

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