Enhanced electron emission from phosphorus- and boron-doped diamond-clad Si field emitter arrays

T. K. Ku*, S. H. Chen, C. D. Yang, N. J. She, F. G. Tarntair, C. C. Wang, C. F. Chen, I. J. Hsieh, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A new fabrication technology of polycrystalline diamond-clad Si microtips using microwave plasma chemical vapordeposition (MPCVD) has been developed to improve the characteristics of electron field emission from the pure Si tips. A uniform and smooth coating morphology for the diamond-clad Si tips have been achieved. Electron emission currents of diamond-clad tips are much higher than those of pure Si tips. Such great improvement is attributed to the lowering of the effective work function in the diamond-clad tips. The effects of phosphorus- and boron-doped diamond-clad Si tips have been also studied in comparison with the undoped ones. The current-voltage characteristics of the undoped diamond-clad tips were further enhanced by the in-situ doping of phosphorus or boron due to a higher electron supplement. Moreover, the P-doped diamond-clad tips show a better field emission performance as compared to the B-doped ones. This difference is surmised to be associated with the higher electron conductivity and defect densities of P-doped diamond films.

Original languageEnglish
Pages (from-to)176-180
Number of pages5
JournalThin Solid Films
Volume290-291
DOIs
StatePublished - 15 Dec 1996

Keywords

  • Diamond-clad Silicon tips
  • Effective work function
  • Field emission
  • Field emitter arrays

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