Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted silicon-on-insulator by high-density current

H. H. Lin*, S. L. Cheng, L. J. Chen, Chih Chen, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Enhanced dopant activation and elimination of end-of-range (EOR) defects in BF2+-implanted silicon-on-insulator (SOI) have been achieved by high-density current stressing. With the high-density current stressing, the implantation amorphous silicon underwent recrystallization, enhanced dopant activation and elimination of the (EOR) defects. The current stressing method allows the complete removal of EOR defects that has not been possible with conventional thermal annealing in the processing of high-performance SOI devices.

Original languageEnglish
Pages (from-to)3971-3973
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number24
DOIs
StatePublished - 10 Dec 2001

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