Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level

Chih Ren Hsieh*, Yung Yu Chen, Wen Shin Lin, Kuo-Jui Lin, Jen Chung Lou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The improved data retention characteristics of Polysilicon-oxide-hafnium oxide-oxide-silicon (SOHOS) type nonvolatile memory were obtained by post-HfO2 trapping layer deposition tetrafluoromethane (CF4) plasma treatment. The memory characteristics such as program/erase speed, retention and endurance were studied comprehensively. That fluorine atoms incorporated into Hf-based high-k material eliminate shallow trap defect level effectively and remain deeper trap level. Although the shallow traps of the HfOF trapping layer SOHOS memory have passivated, it doesn't deteriorate the program/erase speed obviously and retention characteristic was then improved because of deeper electron storage level. The results clearly indicate CF4 plasma treatment-induced deep electron storage level is a feasible technology for future SOHOS-type nonvolatile flash memory application.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications
Pages257-263
Number of pages7
Edition2
DOIs
StatePublished - 1 Aug 2011
EventSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting - Montreal, QC, Canada
Duration: 2 May 20114 May 2011

Publication series

NameECS Transactions
Number2
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period2/05/114/05/11

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  • Cite this

    Hsieh, C. R., Chen, Y. Y., Lin, W. S., Lin, K-J., & Lou, J. C. (2011). Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications (2 ed., pp. 257-263). (ECS Transactions; Vol. 35, No. 2). https://doi.org/10.1149/1.3568868