Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots

Tzu Neng Lin, Svette Reina Merden S. Santiago, Jie An Zheng, Yu Chiang Chao, Chi Tsu Yuan, Ji Lin Shen, Chih Hung Wu, Cheng An J. Lin, Wei Ren Liu, Ming Chiang Cheng, Wu Ching Chou

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell.

Original languageEnglish
Article number39163
JournalScientific reports
Volume6
Issue number1
DOIs
StatePublished - 23 Dec 2016

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