Enhanced conductivity and breakdown of oxides grown on heavily implanted substrates

Christopher J. Hegarty*, Jack C. Lee, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The enhanced conductivity exhibited by oxides on heavily-doped Si substrates is studied using substrates implanted with P, As and Si in the range 1015-1016 cm-2 with gate oxides formed by thermal oxidation and CVD. Studies of light emission photographs, TEM, I-V and breakdown characteristics suggest that the primary cause of enhanced conduction is thinning of the oxide at the field edge.

Original languageEnglish
Pages (from-to)1207-1213
Number of pages7
JournalSolid State Electronics
Volume34
Issue number11
DOIs
StatePublished - 1 Jan 1991

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