Enhanced carrier-mobility-fluctuation origin low-frequency noise in uniaxial strained PMOSFETs

Jack J.Y. Kuo; William P.N. Chen; Pin Su

doi:10.1109/LED.2010.2044138

Enhanced carrier-mobility-fluctuation origin low-frequency noise in uniaxial strained PMOSFETs

Jack J.Y. Kuo, William P.N. Chen, Pin Su

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V_gst) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility-fluctuation origin 1/f noise for the strained device in the high-V_gst regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.

Original language	English
Article number	5443530
Pages (from-to)	497-499
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	5
DOIs	https://doi.org/10.1109/LED.2010.2044138
State	Published - 1 May 2010

Keywords

Carrier mobility fluctuation
Low-frequency noise
Process-induced strain
Uniaxial strained PMOSFET

Access to Document

10.1109/LED.2010.2044138

Fingerprint Dive into the research topics of 'Enhanced carrier-mobility-fluctuation origin low-frequency noise in uniaxial strained PMOSFETs'. Together they form a unique fingerprint.

Cite this

@article{4689e9aaafd64a2ca276da296269dafb,

title = "Enhanced carrier-mobility-fluctuation origin low-frequency noise in uniaxial strained PMOSFETs",

abstract = "This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (Vgst) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility-fluctuation origin 1/f noise for the strained device in the high-Vgst regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.",

keywords = "Carrier mobility fluctuation, Low-frequency noise, Process-induced strain, Uniaxial strained PMOSFET",

author = "Kuo, {Jack J.Y.} and Chen, {William P.N.} and Pin Su",

year = "2010",

month = may,

day = "1",

doi = "10.1109/LED.2010.2044138",

language = "English",

volume = "31",

pages = "497--499",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Enhanced carrier-mobility-fluctuation origin low-frequency noise in uniaxial strained PMOSFETs

AU - Kuo, Jack J.Y.

AU - Chen, William P.N.

AU - Su, Pin

PY - 2010/5/1

Y1 - 2010/5/1

N2 - This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (Vgst) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility-fluctuation origin 1/f noise for the strained device in the high-Vgst regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.

AB - This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (Vgst) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility-fluctuation origin 1/f noise for the strained device in the high-Vgst regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.

KW - Carrier mobility fluctuation

KW - Low-frequency noise

KW - Process-induced strain

KW - Uniaxial strained PMOSFET

UR - http://www.scopus.com/inward/record.url?scp=77951880177&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2044138

DO - 10.1109/LED.2010.2044138

M3 - Article

AN - SCOPUS:77951880177

VL - 31

SP - 497

EP - 499

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 5

M1 - 5443530

ER -

Enhanced carrier-mobility-fluctuation origin low-frequency noise in uniaxial strained PMOSFETs

Abstract

Keywords

Access to Document

Other files and links

Cite this