Enhanced carrier-mobility-fluctuation origin low-frequency noise in uniaxial strained PMOSFETs

Jack J.Y. Kuo, William P.N. Chen, Pin Su

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (Vgst) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility-fluctuation origin 1/f noise for the strained device in the high-Vgst regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.

Original languageEnglish
Article number5443530
Pages (from-to)497-499
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number5
DOIs
StatePublished - 1 May 2010

Keywords

  • Carrier mobility fluctuation
  • Low-frequency noise
  • Process-induced strain
  • Uniaxial strained PMOSFET

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