Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICs

Sun Jung Kim*, Byung Jin Cho, M. F. Li, S. J. Ding, M. B. Yu, Chunxiang Zhu, Albert Chin, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

29 Scopus citations

Abstract

It is demonstrated for the first time that voltage linearity coefficients (VCC) of metal-insulator-metal (MIM) capacitors can be engineered and virtually zero VCC can be achieved by using stacked insulator structure of high-K and SiO 2 dielectrics. Capacitance density of 6 fF/μm 2 and VCC of 14 ppm/V 2 achieved in this work are the best ever reported. The HfO 2/SiO 2 stacked MIM shows excellent performance in other parameters as well, such as low leakage current, low TCC, and stable frequency dependence.

Original languageEnglish
Pages (from-to)218-219
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Oct 2004
Event2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
Duration: 15 Jun 200417 Jun 2004

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