Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots

Jyh Shyang Wang*, Ru Shang Hsiao, Jenn-Fang Chen, Chu Shou Yang, Kuo-Jui Lin, Chiu Yueh Liang, Chih Ming Lai, Hui Yu Liu, Tung Wei Chi, Jim Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Continuous large-broad laser gain spectra near 1.3 μm are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoupled InAs QD lasers, was obtained around 230 nm (below threshold) with a narrow lasing spectrum. An internal differential quantum efficiency as high as 90%, a maximum measured external differential efficiency of 73% for a stripe-length of L = 1 mm, and a threshold current density for zero total optical loss as low as 7 A/cm2 per QD layer were achieved.

Original languageEnglish
Pages (from-to)1590-1592
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number8
DOIs
StatePublished - Aug 2005

Keywords

  • Electronic vertically coupled quantum dots (EVCQDs)
  • InAs quantum dots (QDs)
  • Lasers

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