Energy-Efficient HfAlOx NCFET: Using Gate Strain and Defect Passivation to Realize Nearly Hysteresis-Free Sub-25mV/dec Switch with Ultralow Leakage

Chia Chi Fan, Chun-Hu Cheng, Yi Ru Chen, Chien Liu, Chun-Yen Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

We experimentally demonstrated that ferroelectric HfAlOx negative capacitance FETs using gate strain and defect passivation can realize a nearly hysteresis-free forward/reverse swing of < 25 mV/dec for symmetric switch, a wide sub-60 mV/dec SS range over 4 decade of I-DS to reach an ultralow I-off of 4 fA/mu m, and a very high I-on/I-off ratio of > 10(8). Under the influence of gate strain and negative capacitance, the NCFETs exhibits 66% I-on enhancement and 27% V-T reduction. In addition, the fluorine defect passivation reduces oxygen vacancies of gate stack to further mitigate interface depolarization field and help to significantly reinforce surface potential amplification effect during NC operation.
Original languageEnglish
Title of host publication63rd IEEE Annual International Electron Devices Meeting (IEDM)
DOIs
StatePublished - 2017

Keywords

  • FET

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    Fan, C. C., Cheng, C-H., Chen, Y. R., Liu, C., & Chang, C-Y. (2017). Energy-Efficient HfAlOx NCFET: Using Gate Strain and Defect Passivation to Realize Nearly Hysteresis-Free Sub-25mV/dec Switch with Ultralow Leakage. In 63rd IEEE Annual International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2017.8268444