Energy band calculation of Si/Si0.7Ge0.3Nanopillars in kspace

Min Hui Chuang, Yiming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we explore the energy band of the well-aligned silicon (Si) nanopillars (NPs) embedded in Si0.7Ge0.3 matrix fabricated by neutral beam etching. Instead of real-space modeling, we formulate and solve the Schrödinger equation with an effective mass approach using 3D finite-element simulation in k→ space. This approach enables us to calculate the electronic structure in a computationally effective manner. The effects of the height, radius, separation, and shape of Si NPs on the energy band and density of states are calculated and discussed. The effect of the radius on the electron energy band control is significant while that of the shape is marginal owing to high geometry aspect ratio. In contrast with the results of electrons, both the radius and separation play crucial role in tuning the energy band of holes; consequently, they govern the variation of energy band gap of Si/Si0.7Ge0.3 NPs.

Original languageEnglish
Title of host publication2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages23-26
Number of pages4
ISBN (Electronic)9784863487635
DOIs
StatePublished - 23 Sep 2020
Event2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, Japan
Duration: 3 Sep 20206 Oct 2020

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2020-September

Conference

Conference2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
CountryJapan
CityVirtual, Kobe
Period3/09/206/10/20

Keywords

  • Density of state
  • Electrons
  • Energy band
  • Light holes
  • Schrodinger equation k space
  • Si/Si0.7Ge0.3 nanopillar

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