Endurance study of switching characteristics in NiO films

M. D. Lee*, C. K. Lo, T. Y. Peng, San-Yuan Chen, Y. D. Yao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
StatePublished - 1 Mar 2007

Keywords

  • Bi-stable memory switching effect
  • Nickel oxide
  • RRAM

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